Method for producing silicon nitride film and silicon nitride film
US10559459B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 11, 2016 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Mar 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film (30) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber (40) accommodating the substrate (20) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber (40) is adjusted to be in a range of 0.2 to 3.5 W/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.