Patent · US Active

Bulk layer transfer processing with backside silicidation

US10559520B2 · kind B2 · utility

0Cited by

6References

10Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Sinan Goktepeli · San Diego, US
George Imthurn · San Diego, US
Stephen Alan FANELLI · San Marcos, US

Key dates

Filing date	May 9, 2018
Grant date	Feb 11, 2020
Priority date	—
Expiry date	May 9, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A radio frequency integrated circuit (RFIC) includes a bulk semiconductor die. The RFIC also includes a first active/passive device on a first-side of the bulk semiconductor die, and a first deep trench isolation region extending from the first-side to a second-side opposite the first-side of the bulk semiconductor die. The RFIC also includes a contact layer on the second-side of the bulk semiconductor die. The RFIC further includes a second-side dielectric layer on the contact layer. The first deep trench isolation region may extend through the contact layer and into the second-side dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.