Pitch division patterning approaches with increased overlay margin for back end of line (BEOL) interconnect fabrication and structures resulting therefrom
US10559529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2016 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Mar 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Pitch division patterning approaches with increased overlay margin for back end of line (BEOL) interconnect fabrication, and the resulting structures, are described. In an example, a method includes forming a first plurality of conductive lines in a first sacrificial material formed above a substrate. The first plurality of conductive lines is formed along a direction of a BEOL metallization layer and is spaced apart by a pitch. The method also includes removing the first sacrificial material, forming a second sacrificial material adjacent to sidewalls of the first plurality of conductive lines, and then forming a second plurality of conductive lines adjacent the second sacrificial material. The second plurality of conductive lines is formed along the direction of the BEOL metallization layer, is spaced apart by the pitch, and is alternating with the first plurality of conductive lines. The method also includes removing the second sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.