Crystallized silicon carbon replacement material for NMOS source/drain regions
US10559689B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2015 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Dec 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Tensile strain is applied to a channel region of a transistor by depositing an amorphous SixGe1-x-yCy alloy in at least one of a source and a drain (S/D) region of the transistors. The amorphous SixGe1-x-yCy alloy is crystallized, thus reducing the unit volume of the alloy. This volume reduction in at least one of the source and the drain region applies strain to a connected channel region. This strain improves electron mobility in the channel. Dopant activation in the source and drain locations is recovered during conversion from amorphous to crystalline structure. Presence of high carbon concentrations reduces dopant diffusion from the source and drain locations into the channel region. The techniques may be employed with respect to both planar and non-planar (e.g., FinFET and nanowire) transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.