Inventor · North Plains, OR, US

Daniel B. Aubertine

20Patents
6h-index
19Co-inventors
62Inventor score

Filing activity: Mar 28, 2007 → Jan 8, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9012284B2 Nanowire transistor devices and forming techniques Electricity 39 Active
US8847281B2 High mobility strained channels for fin-based transistors Electricity 39 Active
US7663192B2 CMOS device and method of manufacturing same Electricity 23 Active
US9064944B2 Nanowire transistor with underlayer etch stops Electricity 21 Active
US8957476B2 Conversion of thin transistor elements from silicon to silicon germanium Electricity 12 Active
US9184294B2 High mobility strained channels for fin-based transistors Electricity 8 Active
US9653584B2 Pre-sculpting of Si fin elements prior to cladding for transistor channel applications Electricity 5 Active
US8779477B2 Enhanced dislocation stress transistor Electricity 4 Active
US9614060B2 Nanowire transistor with underlayer etch stops Electricity 1 Active
US11171058B2 Self-aligned 3-D epitaxial structures for MOS device fabrication Electricity 0 Active
US10014412B2 Pre-sculpting of Si fin elements prior to cladding for transistor channel applications Electricity 0 Active
US9660078B2 Enhanced dislocation stress transistor Electricity 0 Active
US10396203B2 Pre-sculpting of Si fin elements prior to cladding for transistor channel applications Electricity 0 Active
US12294027B2 Semiconductor device having doped epitaxial region and its methods of fabrication Electricity 0 Active
US9385221B2 Nanowire transistor with underlayer etch stops Electricity 0 Active
US9231076B2 Enhanced dislocation stress transistor Electricity 0 Active
US10084087B2 Enhanced dislocation stress transistor Electricity 0 Active
US10559689B2 Crystallized silicon carbon replacement material for NMOS source/drain regions Electricity 0 Active
US7833883B2 Precursor gas mixture for depositing an epitaxial carbon-doped silicon film Electricity 0 Active
US9076814B2 Enhanced dislocation stress transistor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.