Magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy (PMA) having an oxide-based PMA-inducing layer and magnetic element including the same
US10559745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2017 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Mar 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are a magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy (PMA) and a magnetic element including the same. The MTJ structure with PMA includes a substrate, a perpendicular magnetic anisotropic inducing layer configured to be disposed on the substrate and including an oxide-based material, a perpendicular antiferromagnetic layer configured to be disposed on the perpendicular magnetic anisotropic inducing layer and including an antiferromagnetic material, a first ferromagnetic layer configured to be disposed on the perpendicular antiferromagnetic layer and having PMA, a tunneling barrier layer configured to be disposed on the first ferromagnetic layer, and a second ferromagnetic layer configured to be disposed on the tunneling barrier layer and having PMA. Therefore, the perpendicular antiferromagnetic layer generates perpendicular coupling at an interface with the perpendicular magnetic anisotropic inducing layer such that perpendicular coupling is further generated between the perpendicular antiferromagnetic layer and the first ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.