Gwangguk An
3Patents
0h-index
8Co-inventors
27Inventor score
Filing activity: Apr 29, 2015 → Aug 10, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9935262B2 | Magnetic tunnel junction element and manufacturing method therefor | Electricity | 0 | Active |
| US10559745B2 | Magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy (PMA) having an oxide-based PMA-inducing layer and magnetic element including the same | Electricity | 0 | Active |
| US11616197B2 | Variable resistance memory device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.