Low K dielectric compositions for high frequency applications

US10562809B2 · kind B2 · utility

Assignee

• Ferro Corporation · US

Inventors

• Cody J. Gleason · Solon, US
• John J. Maloney · South Burlington, US
• Srinivasan Sridharan · Strongsville, US
• George E. Sakoske · Washington, US
• Peter Marley · Buffalo, US
• Mohammed H. Megherhi · Victor, US
• Yie-Shein Her · Canandaigua, US
• Orville W. Brown · Lansdale, US
• Jackie D. Davis · Cleveland, US
• Thomas J. Coffey · Cleveland Heights, US
• Ellen S. Tormey · Princeton Junction, US
• Stanley Wang · Taipei, TW
• David L. Widlewski · Parma Heights, US

Key dates

• Filing date: Nov 5, 2018
• Grant date: Feb 18, 2020
• Expiry date: Nov 5, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K1/0306
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO2, 5-35 mole % or 0.1-35 mole % B2O3, 0.1-10 mole % or 0.1-25 mole % Al2O3, 0.1-10 mole % K2O, 0.1-10 mole % Na2O, 0.1-20 mole % Li2O, 0.1-30 mole % F. The total amount of Li2O+Na2O+K2O is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.