Method for manufacturing substrate
US10563307B2 · kind B2 · utility
0Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2017 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Jun 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02614
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a substrate with less warpage includes a step of forming SiC film 121 on a surface of Si substrate 11, a step of removing bottom surface RG2 which is at least a part of the Si substrate 11 contacting with the SiC film 121, and a step of forming another SiC film on a surface of SiC film 121 after the step of removing the bottom surface RG2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.