Method, system, and apparatus for controlling a temperature of a substrate in a plasma processing chamber
US10563919B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2017 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Apr 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B3/283
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An embodiment includes an apparatus for controlling temperature of a substrate, an apparatus for treating a substrate comprising the same, and a method of controlling the same, which may control the temperature of the substrate by each area and not increasing the volume of the apparatus. The substrate temperature control apparatus comprises: a support plate for supporting a substrate; a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area; a power supply unit for providing a power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device; and a controller for controlling a power which is supplied to each heating units by controlling unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.