Auto-referenced memory cell read techniques
US10566052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2017 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Dec 22, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices related to auto-referenced memory cell read techniques are described. The auto-referenced read may encode user data to include a certain number bits having a first logic state prior to storing the user data in memory cells. Subsequently, reading the encoded user data may be carried out by applying a read voltage to the memory cells while monitoring a series of switching events by activating a subset of the memory cells having the first logic state. The auto-referenced read may identify a particular switching event that correlates to a median threshold voltage value of the subset of the memory cells. Then, the auto-referenced read may determine a reference voltage that takes into account a statistical property of threshold voltage distribution of the subset of the memory cells. The auto-referenced read may identify a time duration to maintain the read voltage based on determining the reference voltage. When the time duration expires, the auto-referenced read may determine that the memory cells that have been activated correspond to the first logic state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.