Patent · US Active

Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

US10566210B2 · kind B2 · utility

0Cited by

2References

6Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Andreas Rueckerl · Konzell, DE
Roland Zeisel · Tegernheim, DE
Simeon Katz · Regensburg, DE

Key dates

Filing date	Feb 19, 2016
Grant date	Feb 18, 2020
Priority date	—
Expiry date	Feb 19, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/034
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.