Atomic layer etching of tantalum
US10566213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2018 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Jul 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for evaluating synergy of modification and removal operations for a wide variety of materials to determine process conditions for self-limiting etching by atomic layer etching are provided herein. Methods include determining the surface binding energy of the material, selecting a modification gas for the material where process conditions for modifying a surface of the material generate energy less than the modification energy and greater than the desorption energy, selecting a removal gas where process conditions for removing the modified surface generate energy greater than the desorption energy to remove the modified surface but less than the surface binding energy of the material to prevent sputtering, and calculating synergy to maximize the process window for atomic layer etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.