Wide channel gate structure and method of forming

US10566361B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chia-Yu Wei · Tainan, TW
• Fu-Cheng Chang · Tainan, TW
• Hsin-Chi Chen · Tainan, TW
• Ching-Hung Kao · Hengshan, TW
• Chia-Pin Cheng · Kaohsiung, TW
• Kuo-Cheng Lee · Tainan, TW
• Hsun-Ying Huang · Tainan, TW
• Yen-Liang Lin · Taichung, TW

Key dates

• Filing date: May 10, 2017
• Grant date: Feb 18, 2020
• Expiry date: May 10, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/18

Abstract

A gate structure includes a gate and a first isolation structure having a top surface and a bottom surface. The gate includes a first sidewall adjacent to the first isolation structure, a second sidewall, a first horizontal surface adjacent to a bottom edge of the first sidewall and a bottom edge of the second sidewall, the first horizontal surface being between the top surface of the first isolation structure and the bottom surface of the first isolation structure. The gate also includes a second horizontal surface adjacent to a top edge of the second sidewall. An effective channel width defined by the gate structure includes a height of the second sidewall and a width of the second horizontal surface.