Power semiconductor device with floating field ring termination

US10566463B2 · kind B2 · utility

Assignee

• ABB Schweiz AG · CH

Inventors

• Friedhelm Bauer · Suhr, CH
• Umamaheswara Vemulapati · Windisch, CH
• Marco Bellini · Schlieren, CH

Key dates

• Filing date: May 23, 2019
• Grant date: Feb 18, 2020
• Expiry date: May 23, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

In a power semiconductor device of the application a total number n of floating field rings (10_1 to 10_n) formed in a termination area is at least 10. For any integer i in a range from i=2 to i=n, a ring-to-ring separation di,i−i between an i-th floating field ring and a directly adjacent (i−1)-th floating field ring, when counting the floating field rings (10_1 to 10_n) along a straight line starting from a main pn-junction and extending in a lateral direction away from the main pn-junction, is given by the following formula: di,i−1=d1,0+Σj=1j=i−1 Δj for i=2 to n, wherein d1,0 is a distance between the innermost floating field ring (10_1) closest to the main pn-junction and the main pn-junction, and wherein: Δzone1−0.05·Δzone2<Δj<Δzone1+0.05·Δzone2 for j=1 to I−2, 2·Δzone2<|Δj|<10·Δzone2. for j=I−1, 0.95·Δzone2<Δj<1.05·Δzone2 for j=I to n−1, Δzone2>0.1 μm, and −Δzone2/2<Δzone1<Δzone2/2, wherein I is an integer, for which 3≤l≤n/2.