Friedhelm Bauer
24Patents
9h-index
16Co-inventors
72Inventor score
Filing activity: Feb 22, 1989 → Sep 3, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5040042A | Bidirectional semiconductor component that can be turned off | Electricity | 34 | Expired |
| US4985741A | MOS-controlled bipolar power semiconductor component | Electricity | 30 | Expired |
| US5105244A | Gate turn-off power semiconductor component | Electricity | 28 | Expired |
| US4975782A | Field effect controlled, bipolar power semiconductor component with silicide layer | Electricity | 26 | Expired |
| US5668385A | Power semiconductor component with transparent emitter and stop layer | Electricity | 15 | Expired |
| US5698867A | Turn-off, MOS-controlled, power semiconductor component | Electricity | 15 | Expired |
| US4954869A | MOS-controlled thyristor (MCT) | Electricity | 12 | Expired |
| US4967255A | Controllable power semiconductor component | Electricity | 9 | Expired |
| US5619047A | Semiconductor diode in which electrons are injected into a reverse current | Electricity | 9 | Expired |
| US5144400A | Power semiconductor device with switch-off facility | Electricity | 8 | Expired |
| US5491351A | Gate turn-off thyristor | Electricity | 7 | Expired |
| US5414290A | IGBT with self-aligning cathode pattern and method for producing it | Electricity | 7 | Expired |
| US8304814B2 | Power semiconductor device | Electricity | 7 | Active |
| US5710445A | Gate turn-off thyristor for high blocking voltage and small component thickness | Electricity | 5 | Expired |
| US6576936B1 | Bipolar transistor with an insulated gate electrode | Electricity | 4 | Expired |
| US5349213A | Turn-off power semiconductor device | Electricity | 3 | Expired |
| US5616938A | MOS-controlled power semiconductor component for high voltages | Electricity | 3 | Expired |
| US5661315A | Controllable power semiconductor component | Electricity | 3 | Expired |
| US5243201A | MOS-controlled thyristor MCT | Electricity | 3 | Expired |
| US8829563B2 | Power semiconductor device and method for manufacturing such a power semiconductor device | Electricity | 1 | Active |
| US11031473B2 | Silicon carbide superjunction power semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US9659927B2 | Junction barrier Schottky rectifier | Electricity | 0 | Active |
| US10629677B2 | Area efficient floating field ring termination | Electricity | 0 | Active |
| US10566463B2 | Power semiconductor device with floating field ring termination | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.