Method for fabrication of a CEM device
US10566527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2018 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Mar 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Disclosed is a method for the fabrication of a correlated electron material (CEM) device comprising: forming a layer of a conductive substrate on a substrate; forming a layer of a correlated electron material on the layer of conductive substrate; forming a layer of a conductive overlay on the layer of correlated electron material; patterning these layers to form a stack comprising a conductive substrate, a CEM layer and a conductive overlay, on the substrate; forming a cover layer of an insulating material over the stack; and patterning the cover layer wherein: the patterning of the cover layer comprises etching a trench in the cover layer whereby to expose the conductive overlay; and the method further comprises treating the exposed conductive overlay to remove an oxidation layer there from.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.