Patent · US Active

Integrated circuit and method of manufacturing integrated circuit

US10566941B2 · kind B2 · utility

1Cited by
3References
32Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 25, 2018
Grant dateFeb 18, 2020
Priority date—
Expiry dateJul 25, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B10/18
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit having a plurality of miniaturized transistors, wherein the plurality of transistors include: high concentration transistors which include channel regions having impurity concentrations of a first concentration; and low concentration transistors which include channel regions having impurity concentrations of a second concentration lower than the first concentration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.