Inventor · Kyoto, JP

Kunihiko Iwamoto

15Patents
3h-index
14Co-inventors
53Inventor score

Filing activity: Mar 24, 2004 → Aug 6, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US7387686B2 Film formation apparatus Electricity 11 Expired
US7482234B2 Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere Electricity 3 Expired
US8207584B2 Semiconductor device and manufacturing method of the same Electricity 3 Active
US9082654B2 Method of manufacturing non-volatile memory cell with simplified step of forming floating gate Electricity 3 Active
US7372112B2 Semiconductor device, process for producing the same and process for producing metal compound thin film Electricity 2 Expired
US7772678B2 Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen Electricity 2 Active
US10566941B2 Integrated circuit and method of manufacturing integrated circuit Electricity 1 Active
US7790627B2 Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film Electricity 1 Active
US7419920B2 Metal thin film and semiconductor comprising a metal thin film Electricity 1 Active
US8367560B2 Semiconductor device manufacturing method Electricity 1 Active
US7884423B2 Semiconductor device and fabrication method thereof Electricity 1 Active
US10554179B2 Differential circuit Electricity 0 Active
US10622443B2 Semiconductor device with different material layers in element separation portion trench and method for manufacturing semiconductor device Electricity 0 Active
US9425203B2 Non-volatile memory cell in semiconductor device Electricity 0 Active
US7397094B2 Semiconductor device and manufacturing method thereof Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.