Organosilane precursors for ALD/CVD silicon-containing film applications and methods of using the same

US10570513B2 · kind B2 · utility

Assignee

• American Air Liquide, Inc. · US

Inventors

• Glenn Kuchenbeiser · Newark, US
• Claudia Fafard · Marienthal, DE

Key dates

• Filing date: Dec 10, 2015
• Grant date: Feb 25, 2020
• Expiry date: Jul 15, 2036

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/56
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x≠3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.