Method and apparatus for performing self-referenced read in a magnetoresistive random access memory
US10573363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2016 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of reading information stored in a magnetic memory. In a magnetic memory comprising a magnetic tunnel junction including a first reference layer and a free layer, and a spin orbit active (SO) line adjacent to the first reference layer of the magnetic tunnel junction, first and second currents are passed through the SO line so as to achieve two different directions of a magnetic moment of the first reference layer. Two electrical characteristics of the magnetic tunnel junction are determined, the two electrical characteristics corresponding to the two different directions of the magnetic moment of the first reference layer. These two electrical characteristics are then compared to determine the value of the stored information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.