Inventor · San Jose, CA, US

Dmytro Apalkov

78Patents
8h-index
49Co-inventors
74Inventor score

Filing activity: Jul 1, 2005 → Feb 18, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7486552B2 Method and system for providing a spin transfer device with improved switching characteristics Physics 135 Active
US7518835B2 Magnetic elements having a bias field and magnetic memory devices using the magnetic elements Physics 81 Active
US9130155B2 Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions Electricity 59 Active
US9076537B2 Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction Electricity 44 Active
US9608039B1 Magnetic junctions programmable using spin-orbit interaction torque in the absence of an external magnetic field Electricity 28 Active
US9460397B2 Quantum computing device spin transfer torque magnetic memory Electricity 22 Active
US9105830B2 Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions Electricity 19 Active
US8159866B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories Electricity 12 Active
US9076954B2 Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices Electricity 8 Active
US7800942B2 Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled Physics 7 Active
US8698259B2 Method and system for providing a magnetic tunneling junction using thermally assisted switching Electricity 7 Active
US8786039B2 Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy Electricity 7 Active
US8456882B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories Electricity 6 Active
US9082534B2 Magnetic element having perpendicular anisotropy with enhanced efficiency Emerging Cross-Sectional Technologies 6 Active
US9029965B2 Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer Electricity 6 Active
US8399941B2 Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements Physics 6 Active
US9076541B2 Architecture for magnetic memories including magnetic tunneling junctions using spin-orbit interaction based switching Physics 6 Active
US8406045B1 Three terminal magnetic element Physics 6 Active
US9490421B2 Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions Electricity 5 Active
US8704319B2 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories Physics 5 Active
US10381550B1 Method and system for engineering the secondary barrier layer in dual magnetic junctions Electricity 5 Active
US8422285B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories Physics 5 Active
US8766383B2 Method and system for providing a magnetic junction using half metallic ferromagnets Electricity 5 Active
US9087633B2 Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof Electricity 5 Active
US9384811B2 Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriers Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.