Methods and circuitry for programming non-volatile resistive switches using varistors
US10573375B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2018 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Aug 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/17736
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Integrated circuits with an array of programmable resistive switch elements are provided. A programmable resistive switch element may include two non-volatile resistive memory elements connected in series and two varistors. A first of the two varistors is used to program a top resistive memory element in the resistive switch element, whereas a second of the two varistors is used to program a bottom resistive memory element in the resistive switch element. Row and column drivers implemented using only thin gate oxide transistors are used to program a selected resistive switch in the array without violating a maximum voltage level that satisfies predetermined defects per million (DPM) reliability criteria.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.