Calibration of elementary small patterns in variable-shaped-beam electron-beam lithography
US10573492B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2018 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Sep 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for calibrating elementary patterns in variable-shaped-beam electron-beam lithography, includes the following steps: producing, by variable-shaped-beam electron-beam lithography, a calibration pattern comprising geometric figures each having a nominal critical dimension, the figures being divided into elementary patterns of smaller dimensions than each the nominal critical dimension; measuring the actual critical dimension of each the geometric figure; and applying a regression method on the basis of the actual critical dimensions thus determined to construct a mathematical model expressing either a variation in dimensions of the elementary patterns, or an error in the exposure dose of the elementary patterns producing an equivalent effect to the variation in dimensions, as a function of the dimensions of the elementary patterns. Application to the preparation of data with a view to transferring a pattern to a substrate by variable-shaped-beam electron-beam lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.