Group III nitride semiconductor light-emitting element and method of manufacturing same
US10573783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2016 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Jun 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A group III nitride semiconductor light-emitting element having longer element life than conventional group III nitride semiconductor light-emitting elements and a method of manufacturing the same are provided. A group III nitride semiconductor light-emitting element 100 comprises, in the following order: an n-type group III nitride semiconductor layer 30; a group III nitride semiconductor laminated body 40 obtained by alternately laminating a barrier layer 40a and a well layer 40b narrower in bandgap than the barrier layer 40a in the stated order so that the number of barrier layers 40a and the number of well layers 40b are both N, where N is an integer; an AlN guide layer 60; and a p-type group III nitride semiconductor layer 70, wherein the AlN guide layer 60 has a thickness of 0.5 nm or more and 2.0 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.