Image sensor and electronic camera
US10574930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2016 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Nov 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a first semiconductor layer provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, a second semiconductor layer provided with a supply unit that supplies the transfer unit with a transfer signal for transferring the electric charge from the photoelectric conversion unit to the accumulation unit, and a third semiconductor layer into which a signal is inputted, the signal being based on the electric charge that has been transferred to the accumulation unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.