PCB based semiconductor package with impedance matching network elements integrated therein
US10575394B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2018 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Dec 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/049
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A Doherty amplifier includes a metal baseplate having a die attach region and a peripheral region; a main amplifier and one or more peaking amplifiers, each amplifier comprising a transistor die that includes at least one RF terminal; and a multilayer circuit board having a first side attached to the peripheral region and a second side facing away from the baseplate. The circuit board includes two embedded electrically conductive layers separated from the two sides by respective composite fiber layers, and an embedded dielectric layer disposed between the embedded electrically conductive layers and having a higher dielectric constant than either of the composite fiber layers. The Doherty amplifier also includes an RF impedance matching network that is electrically connected to an RF terminal of at least one amplifier transistor die, and that comprises one or more reactive components formed from at least one of the embedded electrically conductive layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.