Cree, Inc.
2,339Patents
1,949Active
2,339Granted
65Portfolio score
Filing activity: Apr 15, 1996 → Aug 31, 2020 · 773 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8372204B2 | Susceptor for MOCVD reactor | Electricity | 529 | Active |
| US7009199B2 | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current | Electricity | 391 | Expired |
| US6791119B2 | Light emitting diodes including modifications for light extraction | Electricity | 387 | Expired |
| US6120600A | Double heterojunction light emitting diode with gallium nitride active layer | Electricity | 377 | Expired |
| US6201262A | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure | Electricity | 354 | Expired |
| US6217662A | Susceptor designs for silicon carbide thin films | Chemistry; Metallurgy | 330 | Expired |
| US6316793A | Nitride based transistors on semi-insulating silicon carbide substrates | Electricity | 326 | Expired |
| US7122844B2 | Susceptor for MOCVD reactor | Electricity | 309 | Expired |
| US7564180B2 | Light emission device and method utilizing multiple emitters and multiple phosphors | Emerging Cross-Sectional Technologies | 288 | Expired |
| US6187606A | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | Electricity | 285 | Expired |
| US7005679B2 | Multiple component solid state white light | Emerging Cross-Sectional Technologies | 283 | Expired |
| US6548333B2 | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment | Electricity | 255 | Expired |
| US7238560B2 | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate | Electricity | 237 | Expired |
| US6958497B2 | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures | Performing Operations; Transporting | 229 | Expired |
| US7226805B2 | Sequential lithographic methods to reduce stacking fault nucleation sites | Emerging Cross-Sectional Technologies | 226 | Active |
| US6849882B2 | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer | Electricity | 211 | Expired |
| US6821804B2 | Enhanced light extraction in LEDs through the use of internal and external optical elements | Emerging Cross-Sectional Technologies | 206 | Expired |
| US6853010B2 | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor | Electricity | 206 | Expired |
| US7821023B2 | Solid state lighting component | Electricity | 200 | Active |
| US7910945B2 | Nickel tin bonding system with barrier layer for semiconductor wafers and devices | Electricity | 198 | Active |
| US7118262B2 | Reflective optical elements for semiconductor light emitting devices | Emerging Cross-Sectional Technologies | 197 | Expired |
| US6979863B2 | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same | Electricity | 197 | Expired |
| US7919791B2 | Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same | Electricity | 190 | Expired |
| US6218680A | Semi-insulating silicon carbide without vanadium domination | Chemistry; Metallurgy | 183 | Expired |
| US7456499B2 | Power light emitting die package with reflecting lens and the method of making the same | Electricity | 171 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.