Co-modeling post-lithography critical dimensions and post-etch critical dimensions with multi-task neural networks
US10579764B2 · kind B2 · utility
2Cited by
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Key dates
| Filing date | Jun 6, 2018 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Jun 15, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/0985
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is presented for constructing a deep neural network based model to concurrently simulate post-lithography critical dimensions (CDs) and post-etch critical dimensions (CDs) and to improve the modeling accuracy of each process respectively. The method includes generating lithographic aerial images of physical design layout patterns, constructing a multi-task neural network including two output channels, training the multi-task neural network with the training data of the lithographic aerial images, and outputting simulated critical dimension values pertaining to lithography and etch processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.