Magnetic recording assisted by two spin hall effect (SHE) layers in the write gap
US10580441B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2019 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Mar 29, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/6082
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a stack of two SHE layers with an intermediate insulation layer is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. Both of the SHE layers are a Spin Hall Angle (SHA) material with an absolute value for SHA>0.05. The SHE layers have front sides at the air bearing surface (ABS) or recessed therefrom, and backsides up to 80 nm from the ABS. Current (ISHE) is applied in a cross-track direction and synchronized with the write current. A first SHE layer generates transverse spin transfer torque that tilts a local MP magnetization at the MP trailing side to enhance the MP write field, and the second SHE layer generates transverse spin transfer torque that tilts a local TS magnetization at the TS bottom surface to increase the TS return field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.