High-density metal-insulator-metal capacitors
US10580581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2017 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Jan 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating a structure that includes a metal-insulator-metal (MIM) capacitor and structures that include a MIM capacitor. The MIM capacitor includes a layer stack with a first electrode, a second electrode, and a third electrode. The layer stack includes a pilot opening extending at least partially through at least one of the first electrode, the second electrode, and the third electrode. A dielectric layer is arranged over the metal-insulator-metal capacitor, and includes a via opening extending vertically to the pilot opening. A via is arranged in the via opening and the pilot opening. The pilot opening has a cross-sectional area that is less than a cross-sectional area of the via opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.