Method and apparatus for plasma etching
US10580617B2 · kind B2 · utility
1Cited by
17References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2017 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Apr 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.