Patent · US Active

Planarization process and apparatus

US10580659B2 · kind B2 · utility

3Cited by

10References

14Claims

0Family size

Assignee

Canon Kabushiki Kaisha · JP

Inventors

Niyaz Khusnatdinov · Round Rock, US
Douglas J. Resnick · Phoenix, US
Dwayne L. LaBrake · Austin, US

Key dates

Filing date	Jul 30, 2018
Grant date	Mar 3, 2020
Priority date	—
Expiry date	Jul 30, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/20
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods and apparatus for planarization of a substrate. Material is dispensed onto the substrate that varies depending upon the substrate topography variation. A superstrate is brought into contact with the material, the material takes on a shape of the superstrate. The material is solidified. The superstrate is lifted away from the solidified material. Material has a first shrinkage coefficient. Second material is dispensed onto the solidified material with an average thickness. The average thickness is greater than a second material thickness threshold that is dependent upon step height of the substrate and the first shrinkage coefficient. The second material is then solidified.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.