Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
US10580827B1 · kind B1 · utility
6Cited by
160References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2018 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Nov 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM bit cell consists of a magnetic tunnel junction stack having a significantly improved performance of the magnetic storage layer. The MRAM device utilizes a polarizer layer with a magnetic vector that can switch between a stabilizing magnetic direction and a programming magnetic direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.