Method for making a gallium nitride light-emitting diode

US10580931B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Ivan-Christophe Robin · Grenoble, FR
• Matthew Charles · St. Louis Park, US
• Yohan Desieres · Le Pont-de-Claix, FR

Key dates

• Filing date: Jun 2, 2017
• Grant date: Mar 3, 2020
• Expiry date: Jun 2, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/872

Abstract

A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.