Light-emitting diode chip, and method for manufacturing a light-emitting diode chip
US10580938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2016 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Nov 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
Abstract
A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.