Patent · US Active

Light-emitting diode chip, and method for manufacturing a light-emitting diode chip

US10580938B2 · kind B2 · utility

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1References
10Claims
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Key dates

Filing dateNov 17, 2016
Grant dateMar 3, 2020
Priority date
Expiry dateNov 17, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/034

Abstract

A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.