Patent · US Active

Method for producing thin MEMS chips on SOI substrate and micromechanical component

US10584029B2 · kind B2 · utility

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13Claims

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Assignee

Robert Bosch GmbH · DE

Inventors

Jochen Reinmuth · Reutlingen, DE
Burkhard Kuhlmann · Reutlingen, DE
Holger Hoefer · Tegernsee, DE

Key dates

Filing date	Aug 6, 2018
Grant date	Mar 10, 2020
Priority date	—
Expiry date	Aug 6, 2038

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2203/0118
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method for producing thin MEMS chips on SOI substrate including: providing an SOI substrate having a silicon layer on a front side and having an oxide intermediate layer, producing a layer structure on the front side of the SOI substrate and producing a MEMS structure from this layer structure, capping the MEMS structure and producing a cavity, and etching a back side of the SOI substrate down to the oxide intermediate layer. Also described is a micromechanical component having a substrate, a MEMS layer structure having a MEMS structure in a cavity and a cap element, the MEMS structure and its cavity being enclosed by the substrate underneath and the cap element above, the substrate being made of polycrystalline silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.