Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them
US10584265B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Oct 10, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a C6 to C10 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.