Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US10584419B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2018 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Nov 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a technique that includes providing a substrate; and forming a film on the substrate by performing: supplying a first inert gas from a first supplier to the substrate; supplying a second inert gas from a second supplier to the substrate; and supplying a first processing gas from a third supplier, which is installed on an opposite side of the first supplier across a straight line passing through the second supplier and a center of the substrate, to the substrate, wherein in the act of forming the film, a substrate in-plane film thickness distribution of the film formed on the substrate is adjusted by controlling a balance between a flow rate of the first inert gas supplied from the first supplier and a flow rate of the second inert gas supplied from the second supplier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.