Processes for producing III-N single crystals, and III-N single crystal

US10584427B2 · kind B2 · utility

Assignee

• FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

• Marit Gründer · Berlin, DE
• Frank Brunner · Berlin, DE
• Eberhard Richter · Naila, DE
• Frank Habel · Freiberg, DE
• Markus Weyers · Wildau, DE

Key dates

• Filing date: Jan 30, 2018
• Grant date: Mar 10, 2020
• Expiry date: Jan 30, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/24851
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation εXX in the range of <0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation εXX in the range of <0.