Frank Habel
14Patents
2h-index
15Co-inventors
47Inventor score
Filing activity: May 5, 2006 → Apr 8, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7727332B2 | Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby | Electricity | 258 | Active |
| US8048224B2 | Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate | Emerging Cross-Sectional Technologies | 2 | Active |
| US7998273B2 | Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon | Emerging Cross-Sectional Technologies | 1 | Active |
| US8778078B2 | Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such | Electricity | 1 | Active |
| US10309037B2 | Method for producing III-N templates and the reprocessing thereof and III-N template | Emerging Cross-Sectional Technologies | 1 | Active |
| US9074297B2 | Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy | Emerging Cross-Sectional Technologies | 1 | Active |
| US10883191B2 | Method for producing III-N templates and the reprocessing thereof and III-N template | Emerging Cross-Sectional Technologies | 0 | Active |
| US10662549B2 | Growth of A-B crystals without crystal lattice curvature | Electricity | 0 | Active |
| US9461121B2 | Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such | Electricity | 0 | Active |
| US10584427B2 | Processes for producing III-N single crystals, and III-N single crystal | Emerging Cross-Sectional Technologies | 0 | Active |
| US9896779B2 | Method for producing III-N single crystals, and III-N single crystal | Emerging Cross-Sectional Technologies | 0 | Active |
| US12168839B2 | Growth of A-B crystals without crystal lattice curvature | Electricity | 0 | Active |
| US9115444B2 | Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon | Emerging Cross-Sectional Technologies | 0 | Active |
| US9856579B2 | Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.