Photomask blank, method for manufacturing photomask, and mask pattern formation method
US10585345B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2016 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Mar 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask blank (1) having: a transparent substrate (10); a first film (11) etched by chlorine/oxygen-based dry etching and made of a material having resistance against fluorine-based dry etching; and a second film (12) formed adjacent to the first film and made of a material which comprises silicon and oxygen or silicon, oxygen, and nitrogen and has an Si—Si bond and which is substantially not etched by chlorine/oxygen-based dry etching, wherein: the photoresist adhesive performance is improved; the resist pattern is stably maintained without degrading, collapsing, or peeling even when a fine resist pattern is formed from a photoresist film; and an excellent shape and dimensional accuracy is obtained in regard to etching of a lower layer film in which the resist pattern is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.