Selective reading of memory with improved accuracy
US10585735B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2017 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Jul 24, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0411
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This disclosure relates to selectively performing a read with increased accuracy, such as a self-reference read, from a memory. In one aspect, data is read from memory cells, such as magnetoresistive random access memory (MRAM) cells, of a memory array. In response to detecting a condition associated with reading from the memory cells, a self-reference read can be performed from at least one of the memory cells. For instance, the condition can indicate that data read from the memory cells is uncorrectable via decoding of error correction codes (ECC). Selectively performing self-reference reads can reduce power consumption and/or latency associated with reading from the memory compared to always performing self-reference reads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.