Semiconductor device

US10586861B2 · kind B2 · utility

Assignee

• Nexperia B.V. · NL

Inventors

• Stefan Berglund · Eindhoven, NL
• Soenke Habenicht · Eindhoven, NL
• Steffen Holland · Hamburg, DE
• Tim Boettcher · Scheeßel, DE

Key dates

• Filing date: Nov 21, 2017
• Grant date: Mar 10, 2020
• Expiry date: Nov 21, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/47

Abstract

A semiconductor device and a method of making the same is provided. The device includes a semiconductor substrate having a major surface and a back surface. The device also includes a bipolar transistor. The bipolar transistor has a collector region located in the semiconductor substrate; a base region located within the collector region and positioned adjacent the major surface; an emitter region located within the base region and positioned adjacent the major surface; and a collector terminal located on the major surface of the semiconductor substrate. The collector terminal includes: a first electrically conductive part electrically connected to the collector region; an electrically resistive part electrically connected to the first electrically conductive part, and a second electrically conductive part for allowing an external electrical connection to be made the collector terminal. The second conductive part is electrically connected to the first conductive part via the resistive part.