Dual gate metal-oxide-semiconductor field-effect transistor
US10586865B2 · kind B2 · utility
4Cited by
4References
46Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2017 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Dec 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain extension region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.