Formation of wrap-around-contact to reduce contact resistivity

US10586872B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Adra Carr · Albany, US
• Jingyun Zhang · Albany, US
• Choonghyun Lee · Rensselaer, US
• Takashi Ando · Tuckahoe, US
• Pouya Hashemi · White Plains, US

Key dates

• Filing date: Jul 3, 2018
• Grant date: Mar 10, 2020
• Expiry date: Jul 3, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a source/drain contact is provided. The method includes forming a sacrificial layer on a source/drain, and depositing an oxidation layer on the sacrificial layer. The method further includes heat treating the oxidation layer and the sacrificial layer to form a modified sacrificial layer. The method further includes forming a protective liner on the modified sacrificial layer, and depositing an interlayer dielectric layer on the protective liner. The method further includes forming a trench in the interlayer dielectric layer that exposes a portion of the protective liner.