MRAM read and write methods using an incubation delay interval
US10593397B1 · kind B1 · utility
2Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Dec 7, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Dec 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a particular implementation, a method to perform a read operation on a magneto-resistive random-access memory (MRAM) bit-cell includes: providing a voltage signal across one or more storage elements of the MRAM bit-cell, determining an electrical resistance of the one or more storage elements of the MRAM bit-cell, and removing the voltage signal from the MRAM bit-cell prior to an end of an incubation delay interval.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.