Semiconductor component comprising trench structures and production method therefor

US10593799B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Zundel · Egmating, DE
• Karl-Heinz Bach · Puchheim, DE
• Peter Brandl · Linz, AT
• Andrew Christopher Graeme Wood · St. Jakob im Rosental, AT

Key dates

• Filing date: Aug 10, 2018
• Grant date: Mar 17, 2020
• Expiry date: Aug 10, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26586
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component includes a field-effect transistor arrangement having a drift zone and body region between the drift zone and a first surface of a semiconductor body. Trench structures of a first type extend from the first surface into the semiconductor body and have a maximum lateral dimension at the first surface which is less than a depth of first and second ones of the trench structures. A net doping concentration at a reference depth at a first location in the drift zone is at least 10% greater than at a second location in the drift zone at the reference depth, which is located between the body region and a bottom of the first trench structure. The first location is at the same first lateral distance from the first and second trench structures. The second location is at the same second lateral distance from the first and second trench structures.