Spin-orbit torque (SOT) magnetic memory with voltage or current assisted switching
US10600465B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 17, 2018 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Dec 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic storage device includes a first wire extending along a first direction and a plurality of spin orbit torque magnetic random access memory (SOT-MRAM) devices. Each of the plurality of SOT-MRAM devices is disposed at a respective position along the first wire. The magnetic storage device further includes write circuitry, including: a first transistor coupled to the first wire to apply a first write current along the first wire in the first direction; and a second transistor to select an individual SOT-MRAM device and apply a second write current to the individual SOT-MRAM device concurrently with the application of the first write current. The second write current is along an axis of the individual SOT-MRAM device. The magnetic storage device further includes readout circuitry to read a data value stored by the individual SOT-MRAM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.