Plasma generation apparatus, substrate treating apparatus including the same, and control method for the plasma generation apparatus
US10600618B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2019 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Aug 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/0081
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.